We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.
Journal of Applied Physics
Multiscale Dynamics

Rodin, P.B, Ebert, U, Minarsky, A, & Grekhov, I.V. (2007). Theory of superfast fronts of impact ionization in semiconductor structures. Journal of Applied Physics, 102, 034508‐1–034508‐13.