Superfast fronts of impact ionization in initially unbiased layered semiconductor structures

2002

Journal of Applied Physics , Volume 92 p. 1971- 1980

Additional Metadata
THEME	Energy (theme 4)
Publisher	A.I.P.
Journal	Journal of Applied Physics
Organisation	Multiscale Dynamics
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Rodin, P. B., Ebert, U., Hundsdorfer, W., & Grekhov, I. V. (2002). Superfast fronts of impact ionization in initially unbiased layered semiconductor structures . Journal of Applied Physics, 92, 1971–1980.

See Also
techReport Superfast fronts of impact ionization in initially unbiased layered semiconductor structures P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov
techReport Superfast fronts of impact ionization in initially unbiased layered semiconductor structures P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov
techReport Superfast fronts of impact ionization in initially unbiased layered semiconductor structures P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov
techReport Superfast fronts of impact ionization in initially unbiased layered semiconductor structures P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov

Publication