Tunneling-assisted impact ionization fronts in semiconductors

2002

Additional Metadata
THEME	Energy (theme 4)
Publisher	A.I.P.
Journal	Journal of Applied Physics
Organisation	Multiscale Dynamics
Citation APA Style AAA Style APA Style Cell Style Chicago Style Harvard Style IEEE Style MLA Style Nature Style Vancouver Style American-Institute-of-Physics Style Council-of-Science-Editors Style BibTex Format Endnote Format RIS Format CSL Format DOIs only Format	Rodin, P. B., Ebert, U., Hundsdorfer, W., & Grekhov, I. V. (2002). Tunneling-assisted impact ionization fronts in semiconductors . Journal of Applied Physics, 92, 958–964.

See Also
techReport Tunneling-assisted impact ionization fronts in semiconductors P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov
techReport Tunneling-assisted impact ionization fronts in semiconductors P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov
techReport Tunneling-assisted impact ionization fronts in semiconductors P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov
techReport Tunneling-assisted impact ionization fronts in semiconductors P.B. Rodin, U. Ebert (Ute), W. Hundsdorfer (Willem) and I.V. Grekhov

Publication